| Manufacturer: | International Rectifier |
|
| Product Category: | MOSFET |
|
| RoHS: | Details | |
| Mounting Style: | SMD/SMT |
|
| Package / Case: | SOT-23-3 |
|
| Number of Channels: | 1 Channel |
|
| Transistor Polarity: | N-Channel |
|
| Vds - Drain-Source Breakdown Voltage: | 30 V |
|
| Id - Continuous Drain Current: | 5 A |
|
| Rds On - Drain-Source Resistance: | 29 mOhms |
|
| Vgs - Gate-Source Voltage: | 12 V |
|
| Vgs th - Gate-Source Threshold Voltage: | 0.8 V |
|
| Qg - Gate Charge: | 6.8 nC |
|
| Maximum Operating Temperature: | + 150 C |
|
| Technology: | Si |
|
|
|
|
| Brand: | International Rectifier | |
| Configuration: | Single | |
| Fall Time: | 9.1 ns | |
| Forward Transconductance - Min: | 19 S | |
| Minimum Operating Temperature: | - 55 C | |
| Pd - Power Dissipation: | 1.3 W | |
| Rise Time: | 5.6 ns | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 22 ns | |
| Typical Turn-On Delay Time: | 4.2 ns |